Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer

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dc.contributor.authorDökme, İlbilge
dc.contributor.authorTunç, Tuncay
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorUslu, İbrahim
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-16T08:23:56Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-16T08:23:56Z
dc.date.issued2010
dc.departmentEğitim Fakültesi
dc.description.abstractThe dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The dielectric constant (??), dielectric loss (??), dielectric loss tangent (tan ?) and the ac electrical conductivity (?ac) obtained from the measured capacitance and conductance are studied for Au/PVA(Co,Ni-Doped)/n-Si SDs. Experimental results show that the values of ??, ?? and tan? were found a function of temperature. The ac electrical conductivity (?ac) of Au/ PVA(Co,Ni-Doped)/n-Si SDs is found to increase with temperature.
dc.description.abstract[Abstract Not Available]
dc.identifier.endpage1228en_US
dc.identifier.issn1842-6573
dc.identifier.issue8en_US
dc.identifier.scopusqualityQ4
dc.identifier.startpage1225en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12451/2844
dc.identifier.volume4en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofOptoelectronics and Advanced Materials, Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAu/PVA(Co,Ni-Doped)/n-Si
dc.subjectDielectric Properties
dc.subjectElectrospining Technique
dc.subjectPolyvinyl Acohol
dc.titleTemperature dependent dielectric properties of Schottky diodes with organic interfacial layer
dc.typeArticle

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