Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer
[ X ]
Tarih
2010
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The dielectric constant (??), dielectric loss (??), dielectric loss tangent (tan ?) and the ac electrical conductivity (?ac) obtained from the measured capacitance and conductance are studied for Au/PVA(Co,Ni-Doped)/n-Si SDs. Experimental results show that the values of ??, ?? and tan? were found a function of temperature. The ac electrical conductivity (?ac) of Au/ PVA(Co,Ni-Doped)/n-Si SDs is found to increase with temperature.
[Abstract Not Available]
Açıklama
Anahtar Kelimeler
Au/PVA(Co,Ni-Doped)/n-Si, Dielectric Properties, Electrospining Technique, Polyvinyl Acohol
Kaynak
Optoelectronics and Advanced Materials, Rapid Communications
WoS Q Değeri
N/A
Scopus Q Değeri
Q4
Cilt
4
Sayı
8