Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer

[ X ]

Tarih

2010

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The dielectric constant (??), dielectric loss (??), dielectric loss tangent (tan ?) and the ac electrical conductivity (?ac) obtained from the measured capacitance and conductance are studied for Au/PVA(Co,Ni-Doped)/n-Si SDs. Experimental results show that the values of ??, ?? and tan? were found a function of temperature. The ac electrical conductivity (?ac) of Au/ PVA(Co,Ni-Doped)/n-Si SDs is found to increase with temperature.

[Abstract Not Available]

Açıklama

Anahtar Kelimeler

Au/PVA(Co,Ni-Doped)/n-Si, Dielectric Properties, Electrospining Technique, Polyvinyl Acohol

Kaynak

Optoelectronics and Advanced Materials, Rapid Communications

WoS Q Değeri

N/A

Scopus Q Değeri

Q4

Cilt

4

Sayı

8

Künye