Anomalous peak in the forward-bias C-V plot and temperature-dependent behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) structures

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dc.authoridTecimer, Habibe -- 0000-0002-0094-7427; Fen Bilgisi Egitimi, Aksaray Egitim -- 0000-0001-8976-571X; Tunc, Tuncay -- 0000-0002-3576-2633
dc.contributor.authorTunç, Tuncay
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorDökme, İlbilge
dc.contributor.authorUslu, Habibe
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:26:19Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:26:19Z
dc.date.issued2011
dc.departmentEğitim Fakültesi
dc.description.abstractIn this study, the temperature-dependent mean density of interface states (N(SS)) and series resistance (R(S)) profiles of Au/PVA (Ni,Zn-doped)/n-Si(111) structures are determined using current-voltage (I-V) and admittance spectroscopy [capacitance-voltage (C-V) and conductance-voltage G/omega-V] methods. The other main electronic parameters such as zero-bias barrier height (Phi(B0)), ideality factor (n), and doping concentration (N(D)) are also obtained as a function of temperature. Experimental results show that the values of Phi(B0), n, R(S), and N(SS) are strongly temperature dependent. The values of Phi(B0) and R(S) increase with increasing temperature, while those of n and N(SS) decrease. The C-V plots of Au/PVA (Ni,Zn-doped)/n-Si(111) structures exhibit anomalous peaks in forward bias (depletion region) at each temperature, and peak positions shift towards negative bias with increasing temperature. The peak value of C has been found to be strongly dependent on N(SS), R(S), and temperature. The experimental data confirm that the values of N(SS), R(S), temperature, and the thickness and composition of the interfacial polymer layer are important factors that influence the main electrical parameters of the device.
dc.identifier.doi10.1007/s11664-010-1440-9
dc.identifier.endpage164en_US
dc.identifier.issn0361-5235
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage157en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-010-1440-9
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5541
dc.identifier.volume40en_US
dc.identifier.wosWOS:000287861900008
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Electronic Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.subjectAnomalous Peak
dc.subjectInterface States
dc.subjectSeries Resistance
dc.subjectTemperature Dependence
dc.titleAnomalous peak in the forward-bias C-V plot and temperature-dependent behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) structures
dc.typeArticle

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