Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes

Basit Öğe Kaydı
dc.authoridFen Bilgisi Egitimi, Aksaray Egitim -- 0000-0001-8976-571X;
dc.contributor.authorDökme, İlbilge
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorTunç, Tuncay
dc.contributor.authorUslu, İbrahim
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:26:16Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:26:16Z
dc.date.issued2010
dc.departmentEğitim Fakültesi
dc.description.abstractThe electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs) were studied ill the temperature range of 80-400 K. The investigation of various SDs fabricated with different types of interfacial layer is important for understanding the electrical and dielectric properties of SDs. Therefore, in this study polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si SDs were calculated from the capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. The effects of interface state density (N(ss)) and series resistance (R(s)) on C-V characteristics were investigated in the wide temperature range. It was found that both of the C-V-T and G/w-V-T curves included two abnormal regions and one intersection point. The dielectric constant (epsilon ''), dielectric loss (epsilon ''), dielectric loss tangent (tan delta) and the ac electrical conductivity (sigma(ac)) obtained from the measured capacitance and conductance were studied for Au/PVA (Ni, Zn-doped)/n-Si SDs. Experimental results show that the values of epsilon', epsilon '' and tan delta are a strong function of the temperature. Also, the results indicate the interfacial polarization can be more easily occurred at high temperatures.
dc.identifier.doi10.1016/j.microrel.2009.09.005
dc.identifier.endpage44en_US
dc.identifier.issn0026-2714
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage39en_US
dc.identifier.urihttps://doi.org/10.1016/j.microrel.2009.09.005
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5513
dc.identifier.volume50en_US
dc.identifier.wosWOS:000274610400005
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science
dc.relation.ispartofMicroelectronics Reliability
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleTemperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
dc.typeArticle

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
[ X ]
İsim:
dokme-ilbilge-2010.pdf
Boyut:
967.97 KB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu