The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes

Basit Öğe Kaydı
dc.authoridFen Bilgisi Egitimi, Aksaray Egitim -- 0000-0001-8976-571X; Tecimer, Habibe -- 0000-0002-0094-7427; Tunc, Tuncay -- 0000-0002-3576-2633;
dc.contributor.authorUslu, Habibe
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorTunç, Tuncay
dc.contributor.authorUslu, İbrahim
dc.contributor.authorMammadov, Tofig S.
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:26:30Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:26:30Z
dc.date.issued2011
dc.departmentEğitim Fakültesi
dc.description.abstractThe Au/polyvinyl alcohol (PVA) (Co, Zndoped)/ n-Si Schottky barrier diodes (SBDs) were exposed to various illumination intensities. Illumination effect on the dielectric properties has been investigated by using capacitance- voltage (C-V) and conductance-voltage (G/omega-V) characteristics at 1 MHz and room temperature. The values of dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), electric modulus (M' and M ''), and AC electrical conductivity (sigma(AC)) were found strongly intensity dependent on both the illumination levels and applied bias voltage especially in depletion and accumulation regions. Such bias and illumination dependency of these parameters can be explained on the basis of Maxwell-Wagner interfacial polarization and restructuring and reordering of charges at interface states. In addition, the epsilon'-V plots also show an intersection feature at similar to 2.8 V and such behavior of the epsilon'-V plots appears as an abnormality compared with the conventional behavior of an ideal SBD. The obtained results revealed that illumination intensity enhances the conductivity of Au/PVA(Co, Zndoped)/ n-Si SBD. (C) 2010 Wiley Periodicals, Inc. J Appl Polym Sci 120: 322-328, 2011
dc.identifier.doi10.1002/app.33131
dc.identifier.endpage328en_US
dc.identifier.issn0021-8995
dc.identifier.issn1097-4628
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage322en_US
dc.identifier.urihttps://doi.org/10.1002/app.33131
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5616
dc.identifier.volume120en_US
dc.identifier.wosWOS:000287215200037
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWiley-Blackwell
dc.relation.ispartofJournal of Applied Polymer Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectPVA
dc.subjectIllumination Effect
dc.subjectVoltage Dependent
dc.subjectDielectric Properties
dc.subjectAC Electrical Conductivity
dc.titleThe illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes
dc.typeArticle

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim
İsim:
uslu-habibe-2011.pdf
Boyut:
1.98 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu