Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer

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dc.authoridFen Bilgisi Egitimi, Aksaray Egitim -- 0000-0001-8976-571X;
dc.contributor.authorTunç, Tuncay
dc.contributor.authorDökme, İlbilge
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorUslu, İbrahim
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:27:40Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:27:40Z
dc.date.issued2010
dc.departmentEğitim Fakültesi
dc.description.abstractCurrent-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (Phi(bo)) and ideality factor (n) determined from the forward bias 1 V characteristics were found strongly depend on temperature. The forward bias semi-logarithmic I-V curves for the different temperatures have an almost common cross-point at a certain bias voltage. While the value of n decreases, the Phi(Bo) increases with increasing temperature. Therefore, we attempted to draw a Phi(bo) vs q/2kT plot to obtain evidence of a Gaussian distribution of the barrier heights, and to calculate the values of mean barrier height and standard deviation at zero bias, respectively.
dc.identifier.endpage950en_US
dc.identifier.issn1842-6573
dc.identifier.issue7en_US
dc.identifier.scopusqualityQ4
dc.identifier.startpage947en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5908
dc.identifier.volume4en_US
dc.identifier.wosWOS:000281114100010
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherNATL INST OPTOELECTRONICS
dc.relation.ispartofOPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectI-V Characteristics
dc.subjectIdeality Factor
dc.subjectBarrier Height
dc.subjectInterface States
dc.titleTemperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer
dc.typeArticle

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