Temperature dependent currentvoltage (IV) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

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dc.authoridTunc, Tuncay -- 0000-0002-3576-2633; Fen Bilgisi Egitimi, Aksaray Egitim -- 0000-0001-8976-571X; Tecimer, Habibe -- 0000-0002-0094-7427
dc.contributor.authorTunç, Tuncay
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorUslu, İbrahim
dc.contributor.authorDökme, İlbilge
dc.contributor.authorUslu, Habibe
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:26:21Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:26:21Z
dc.date.issued2011
dc.departmentEğitim Fakültesi
dc.description.abstractCurrent-voltage (I-V) characteristics of Au/PVA/n-Si (1 1 1) Schottky barrier diodes (SBDs) have been investigated in the temperature range 80-400 K. Here, polyvinyl alcohol (PVA) has been used as interfacial layer between metal and semiconductor layers. The zero-bias barrier height (Phi(B0)) and ideality factor (n) determined from the forward bias I-V characteristics were found strongly dependent on temperature. The forward bias semi-logarithmic I-V curves for different temperatures have an almost common cross-point at a certain bias voltage. The values of Phi(B0) increase with the increasing temperature whereas those of n decrease. Therefore, we have attempted to draw Phi(B0) vs. q/2kT plot in order to obtain evidence of a Gaussian distribution (GD) of the barrier heights (BHs). The mean value of BH (Phi) over bar (B0) and standard deviation (sigma(0)) were found to be 0.974 eV and 0.101 V from this plot, respectively. Thus, the slope and intercept of modified In(I-0/T-2)-q(2)sigma(2)(0)/2(kT)(2) vs. q/kT plot give the values of (Phi) over bar (B0) and Richardson constant (A*) as 0.966 eV and 118.75 A/cm(2)K(2), respectively, without using the temperature coefficient of the BH. This value of A* 118.75 A/cm(2)K(2) is very close to the theoretical value of 120 A/cm(2)K(2) for n-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of Au/PVA/n-Si (1 1 1) SBDs can be successfully explained on the basis of the Thermionic Emission (TE) theory with a GD of the BHs at Au/n-Si interface.
dc.description.sponsorshipGazi University [04/2010-27]
dc.description.sponsorshipThis work is supported by Gazi University Scientific Research Project numbered 04/2010-27.
dc.identifier.doi10.1016/j.mssp.2011.01.018
dc.identifier.endpage145en_US
dc.identifier.issn1369-8001
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ1
dc.identifier.startpage139en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2011.01.018
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5558
dc.identifier.volume14en_US
dc.identifier.wosWOS:000292408500010
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherELSEVIER SCI
dc.relation.ispartofMaterials Science in sEMİCANDUCTOR Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectI-V-T Characteristics
dc.subjectBarrier Height
dc.subjectGaussian Distribution
dc.subjectPoly(vinyl alcohol)
dc.subjectSchottky Barrier Diodes
dc.subjectElectrospinning
dc.titleTemperature dependent currentvoltage (IV) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
dc.typeArticle

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