Illumination dependent admittance characteristics of Au/Zinc acetate doped polyvinyl alcohol (PVA:Zn)/n-Si Schottky barrier diodes (SBDs)

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dc.contributor.authorTaşçıoğlu, İlke
dc.contributor.authorAydemir, Umut
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorTunç, Tuncay
dc.contributor.editorAslan, MH
dc.contributor.editorOral, Ay
dc.contributor.editorÖzer, M.
dc.contributor.editorÇağlar, SH
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-16T09:20:23Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-16T09:20:23Z
dc.date.issued2011
dc.departmentEğitim Fakültesi
dc.description1st International Congress on Advances in Applied Physics and Materials Science (APMAS) -- MAY 12-15, 2011 -- Antalya, TURKEY
dc.descriptionWOS:000301042000058
dc.description.abstractThis study presents the effect of illumination on main electrical parameters of Schottky barrier diode (SBD). The admittance (capacitance-voltage (C-V) and conductance-voltage (G/omega-V)) characteristics of Au/Zinc acetate doped polyvinyl alcohol (PVA:Zn)/n-Si SBD were investigated in dark and under various illumination intensities. Experimental results demonstrate that the C-V plots give a peak due to the illumination induced interface states or electron-hole pairs at metal/semiconductor (M/S) interface. The C-2-V plots were also drawn to determine main electrical parameters such as doping concentration (N-D), depletion layer width (W-D) and barrier height (Phi(B)(C-V)) of device. In addition, the voltage dependence R-s values were obtained from C-V and G/omega-V data by using Nicollian and Brews method. In order to obtain the real diode capacitance and conductance, the high frequency (1 MHz) C-m and G(m)/w values were corrected for the effect of series resistance. All these observations confirm that both C-V and G/w-V characteristics were strongly affected by illumination.
dc.description.sponsorshipIstanbul Kultur Univ, Gebze Inst Technol, Doga Nanobiotech Inc, Terra Lab Inc, LOT Oriel Grp, PHYWE, Delta Elekt Inc
dc.identifier.doi10.1063/1.3663133
dc.identifier.endpage311en_US
dc.identifier.isbn978-0-7354-0971-2
dc.identifier.issn0094-243X
dc.identifier.scopusqualityQ4
dc.identifier.startpage307en_US
dc.identifier.urihttps://doi.org/10.1063/1.3663133
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5085
dc.identifier.volume1400en_US
dc.identifier.wosWOS:000301042000058
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmerican Institute Physics
dc.relation.ispartofInternational Congress on Advances İn Applied Physics and Material Science
dc.relation.ispartofseriesAIP Conference Proceedings
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAu/PVA:Zn/n-Si SBDs
dc.subjectIllumination Effect on C-V and G/w-V Characteristics
dc.subjectSeries Resistance
dc.subjectIntersection Behavior
dc.titleIllumination dependent admittance characteristics of Au/Zinc acetate doped polyvinyl alcohol (PVA:Zn)/n-Si Schottky barrier diodes (SBDs)
dc.typeConference Object

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