The effect of gamma ırradiation on electrical characteristics of au/polyvinyl alcohol (co, zn-doped)/n-si schottky barrier diodes

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dc.authoridTecimer, Habibe -- 0000-0002-0094-7427; Fen Bilgisi Egitimi, Aksaray Egitim -- 0000-0001-8976-571X
dc.contributor.authorTaşçıoğlu, I.
dc.contributor.authorUslu, H.
dc.contributor.authorAltındal, Ş.
dc.contributor.authorDurmuş, P.
dc.contributor.authorDökme, İ.
dc.contributor.authorTunç, T.
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:27:00Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:27:00Z
dc.date.issued2010
dc.departmentEğitim Fakültesi
dc.description.abstractTo show the effect of gamma radiation, Au/Polyvinyl Alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes (SBDs) were exposed to (60)Co gamma-ray source at room temperature. These structures were investigated by using current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G/omega-V) measurement methods before and after irradiation. The C-V and G omega-V measurements were carried out at 1 MHz. The density of interface states (N(ss)) as a function of E(c)-E(ss) was obtained from the forward bias I-V data by taking into account the bias dependence effective barrier height (Phi(e)) and series resistance (R(s)) of device at room temperature. Experimental results show that the values of ideality factor (n), R(s) and N(ss) increased after gamma irradiation. It was found to degrade the reverse leakage current with radiation whereas its effect on the forward I-V characteristics was negligible. The results show that main effect of the radiation is the generation of N(ss) with energy level within the forbidden band gap of Si between polymer and semiconductor. In addition, the values of R(s) were determined from Cheung's method, and it was seen that these values increased with radiation effect. As seen I-V and C-V characteristics, the main electrical parameters such as ideality factor (n), R(s), N(ss) were strongly influenced with the presence of radiation. (C) 2010 Wiley Periodicals, Inc. J Appl Polym Sci 118: 596-603, 2010
dc.identifier.doi10.1002/app.32450
dc.identifier.endpage603en_US
dc.identifier.issn0021-8995
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage596en_US
dc.identifier.urihttps://doi.org/10.1002/app.32450
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5763
dc.identifier.volume118en_US
dc.identifier.wosWOS:000280536400076
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWiley-Blackwell
dc.relation.ispartofJournal of Applied Polymer Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectAu/polyvinyl Alcohol (Co, Zn-doped)/n-Si schottky Barrier Diodes (SBDs)
dc.subjectRadiation Effects
dc.subjectInterface States
dc.subjectSeries Resistance
dc.titleThe effect of gamma ırradiation on electrical characteristics of au/polyvinyl alcohol (co, zn-doped)/n-si schottky barrier diodes
dc.typeArticle

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