The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices

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dc.authoridFen Bilgisi Egitimi, Aksaray Egitim -- 0000-0001-8976-571X; Tunc, Tuncay -- 0000-0002-3576-2633;
dc.contributor.authorDökme, İlbilge
dc.contributor.authorTunç, Tuncay
dc.contributor.authorUslu, İbrahim
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:26:24Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:26:24Z
dc.date.issued2011
dc.departmentEğitim Fakültesi
dc.description.abstractMetal/polyvinyl alcohol/n-type silicon Schottky barrier (SB) devices have been fabricated in this study. The importance of this study is that PVA (Co, Zn doped) nanofiber film as an interfacial layer was formed by the electrospinning technique on n-type silicon substrate. The forward and reverse bias current-voltage (I-V) characteristics of this device were measured at room temperature. The Phi(Bo) value of about 0.749 eV obtained from I-V characteristics indicates that the contact potential barrier exists at the interface between organic and inorganic semiconductor layer, that is, PVA/n-Si interface. The variation in the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the Au/PVA (Co. Zn doped)/n-Si SB devices have been systematically investigated as a function of frequencies in the frequency range of 2 kHz-2 MHz at room temperature. The effects of density of interface states (N-ss) and series resistance (R-s) on I-V, C-V and G/omega-V characteristics were investigated. The high-frequency capacitance (C-m) and conductance (G(m)/omega) values measured under reverse bias were corrected to decrease the effects of series resistance. These results show that the locations of interface states between Si/PVA and series resistance have a significant effect on electrical characteristics of the Au/PVA (Co, Zn doped)/n-Si SB devices. (C) 2011 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.synthmet.2011.01.002
dc.identifier.endpage480en_US
dc.identifier.issn0379-6779
dc.identifier.issue05.Junen_US
dc.identifier.scopusqualityQ1
dc.identifier.startpage474en_US
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2011.01.002
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5581
dc.identifier.volume161en_US
dc.identifier.wosWOS:000288929400019
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectAu/PVA (Co, Zn-doped)/n-Si
dc.subjectElectrical Properties
dc.subjectFT-IR
dc.subjectElectrospinning Technique
dc.titleThe Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices
dc.typeArticle

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