Studies on frequency and gate voltage effects on the dielectric properties of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer

Basit Öğe Kaydı
dc.authoridTunc, Tuncay -- 0000-0002-3576-2633; Gokcen, Muharrem -- 0000-0001-9063-3028; Fen Bilgisi Egitimi, Aksaray Egitim -- 0000-0001-8976-571X
dc.contributor.authorTunç, Tuncay
dc.contributor.authorGökçen, Muharrem
dc.contributor.authorUslu, İbrahim
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:29:04Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:29:04Z
dc.date.issued2012
dc.departmentEğitim Fakültesi
dc.description.abstractThe admittance technique was used in order to investigate the frequency dependence of dielectric constant (epsilon'), dielectric loss (epsilon aEuro(3)), dielectric loss tangent (tan delta), the ac electrical conductivity (sigma (ac)), and the electric modulus of PVA (Ni-doped) structure. Experimental results revealed that the values of epsilon' , epsilon aEuro(3), (tan delta), sigma (ac) and the electric modulus show fairly large frequency and gate bias dispersion due to the interface charges and polarization. The sigma (ac) is found to increase with both increasing frequency and voltage. It can be concluded that the interface charges and interfacial polarization have strong influence on the dielectric properties of metal-polymer-semiconductor (MIS) structures especially at low frequencies and in depletion and accumulation regions. The results of this study indicate that the epsilon' values of Au/PVA/n-Si with Nickel-doped PVA interfacial layer are quite higher compared to those with pure and other dopant/mixture's of PVA.
dc.description.sponsorshipDuzce University Scientific Research Project [2012.05.02.110]
dc.description.sponsorshipThis work is supported by Duzce University Scientific Research Project (Project no. 2012.05.02.110).
dc.identifier.doi10.1007/s00339-012-7087-z
dc.identifier.endpage653en_US
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue3en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage649en_US
dc.identifier.urihttps://doi.org/10.1007/s00339-012-7087-z
dc.identifier.urihttps://hdl.handle.net/20.500.12451/6124
dc.identifier.volume109en_US
dc.identifier.wosWOS:000310316800020
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSPRINGER HEIDELBERG
dc.relation.ispartofAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.titleStudies on frequency and gate voltage effects on the dielectric properties of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer
dc.typeArticle

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