Preparation and electrical characterization of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer

Basit Öğe Kaydı
dc.authoridGokcen, Muharrem -- 0000-0001-9063-3028; Fen Bilgisi Egitimi, Aksaray Egitim -- 0000-0001-8976-571X; Tunc, Tuncay -- 0000-0002-3576-2633
dc.contributor.authorTunç, Tuncay
dc.contributor.authorGökçen, Muharrem
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:28:28Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:28:28Z
dc.date.issued2012
dc.departmentEğitim Fakültesi
dc.description.abstractTwo types of Schottky diodes, with and without PVA (Ni-doped) layer, were fabricated to investigate whether or not the PVA (Ni-doped) layer is effective on some electrical parameters such as ideality factor n, barrier height Phi(B0), series resistance R-s, and interface state density N-SS. PVA (Ni-doped) microdrops film was deposited on n-type silicon substrate. SDs with and without PVA (Ni-doped) layer, namely MPS and MS diodes, respectively, were investigated by current-voltage (I-V) measurements at room temperature. Also, series resistance calculations have been performed using Cheung method. The values of n and R-s obtained for MPS are found higher compared to those of MS. This is attributed to the particular distribution of N-SS, and inhomogeneity of barrier height and interfacial layer at metal/semiconductor (M/S) interface. Au/PVA(Ni-doped)/n-Si diode (MPS) exhibits a photovoltaic behavior with an open circuit voltage V-oc 0.42 V and short-circuit current I-SC 33.2 mu A under 100 mW/cm(2) illumination intensity. The obtained photovoltaic results indicate that the MPS diode can be used as an efficient material for applications in optoelectronic applications such as solar cells and photodiode devices.
dc.description.sponsorshipDuzce University Scientific Research Project [2010.05.02.056]
dc.description.sponsorshipThis study is supported by Duzce University Scientific Research Project (project number 2010.05.02.056).
dc.identifier.doi10.1177/0021998311433342
dc.identifier.endpage2850en_US
dc.identifier.issn0021-9983
dc.identifier.issn1530-793X
dc.identifier.issue22en_US
dc.identifier.scopusqualityQ1
dc.identifier.startpage2843en_US
dc.identifier.urihttps://doi.org/10.1177/0021998311433342
dc.identifier.urihttps://hdl.handle.net/20.500.12451/6043
dc.identifier.volume46en_US
dc.identifier.wosWOS:000311318000008
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSage Publications LTD
dc.relation.ispartofJournal of Composite Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.subjectAu/PVA/n-Si
dc.subjectSeries Resistance
dc.subjectIllumination Effect
dc.subjectInterface States
dc.subjectOrganic Interfacial Layer
dc.titlePreparation and electrical characterization of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer
dc.typeArticle

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