Frequency and temperature dependence of dielectric properties of au/polyvinyl alcohol (co, ni-doped)/n-si schottky diodes

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dc.authoridFen Bilgisi Egitimi, Aksaray Egitim -- 0000-0001-8976-571X; Tecimer, Habibe -- 0000-0002-0094-7427;
dc.contributor.authorTunç, Tuncay
dc.contributor.authorUslu, İbrahim
dc.contributor.authorDökme, İlbilge
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorUslu, Habibe
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:26:30Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:26:30Z
dc.date.issued2010
dc.departmentEğitim Fakültesi
dc.description.abstractThe dielectric properties and AC conductivity of Au/polyvinyl alcohol (Co, Ni-doped)/n-Si Schottky diodes (SDs) were investigated in the frequency range 1kHz-1MHz and in the temperature range 80-400K. The frequency and temperature dependence of dielectric constant (epsilon'), dielectric loss (epsilon''), loss tangent (tan ), AC electrical conductivity (sigma ac) and the real and imaginary parts of the electric modulus (M' and M'') were found to be a strong function of frequency and temperature. The values of epsilon', epsilon'' and tan decrease with increasing frequency, while they increase with increasing temperature, especially above 275K. The values of sigma ac increase with both increasing frequency and temperature. Such temperature-related behavior of sigma ac can be attributed to the high mobility of free charges at high temperature. Electric modulus formalism was also analyzed to obtain experimental dielectric data. The values of M' and M'' increase with increasing frequency, while they decrease with increasing temperature. The interfacial polarization, which more easily occurs at low frequencies and high temperatures, consequently contributes to the improvement of the dielectric properties of SDs.
dc.identifier.doi10.1080/00914037.2010.483215
dc.identifier.endpage756en_US
dc.identifier.issn0091-4037
dc.identifier.issue10en_US
dc.identifier.scopusqualityQ1
dc.identifier.startpage739en_US
dc.identifier.urihttps://doi.org/10.1080/00914037.2010.483215
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5618
dc.identifier.volume59en_US
dc.identifier.wosWOS:000280769900001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherTaylor & Francis As
dc.relation.ispartofInternational Journal of Polymeric Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.subjectAu
dc.subjectPVA (Co
dc.subjectNi-Doped)
dc.subjectn-Si
dc.subjectDielectric Properties
dc.subjectElectrospinning Technique
dc.subjectPolyvinyl Alcohol
dc.subjectSchottky Diode
dc.titleFrequency and temperature dependence of dielectric properties of au/polyvinyl alcohol (co, ni-doped)/n-si schottky diodes
dc.typeArticle

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