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Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer
(2010)
The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal ...
The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes
(Wiley-Blackwell, 2011)
The Au/polyvinyl alcohol (PVA) (Co, Zndoped)/ n-Si Schottky barrier diodes (SBDs) were exposed to various illumination intensities. Illumination effect on the dielectric properties has been investigated by using capacitance- ...
Preparation and characterization of neodymia doped PVA/Zr-Ce oxide nanocrystalline composites via electrospinning technique
(Taylor & Francis, 2011)
In this study, neodymia doped poly(vinyl) alcohol/zirconium-cerium acetate (PVA/Zr-Ce) nanofibers were prepared using the electrospinning technique, and then calcined at 800 degrees C for 2 hours. For this purpose, PVA/Zr-Ce ...
Temperature dependent currentvoltage (IV) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
(ELSEVIER SCI, 2011)
Current-voltage (I-V) characteristics of Au/PVA/n-Si (1 1 1) Schottky barrier diodes (SBDs) have been investigated in the temperature range 80-400 K. Here, polyvinyl alcohol (PVA) has been used as interfacial layer between ...
Synthesis and characterization of boron-doped hafnia electrospun nanofibers and nanocrystalline ceramics
(Taylor & Francis, 2012)
In this study, boron-doped poly(vinyl) alcohol/HfO2 nanofibers were prepared by electrospinning using PVA as a precursor. The effect of boron doping was investigated in terms of solution properties, morphological changes ...
Frequency and temperature dependence of dielectric properties of au/polyvinyl alcohol (co, ni-doped)/n-si schottky diodes
(Taylor & Francis As, 2010)
The dielectric properties and AC conductivity of Au/polyvinyl alcohol (Co, Ni-doped)/n-Si Schottky diodes (SDs) were investigated in the frequency range 1kHz-1MHz and in the temperature range 80-400K. The frequency and ...
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
(Pergamon-Elsevier Science, 2010)
The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs) were studied ill the temperature range of 80-400 K. The investigation of various SDs fabricated with different types of interfacial ...
Studies on frequency and gate voltage effects on the dielectric properties of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer
(SPRINGER HEIDELBERG, 2012)
The admittance technique was used in order to investigate the frequency dependence of dielectric constant (epsilon'), dielectric loss (epsilon aEuro(3)), dielectric loss tangent (tan delta), the ac electrical conductivity ...
Investigation of current-voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide
(Wiley-Blackwell, 2014)
Temperature dependent current-voltage (I-V) measurements of Au/Polyvinyl Alcohol+Bi2O3/n-Si structure were conducted between 100 and 350 K for investigating the temperature dependence of I-V characteristics and current ...
Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer
(NATL INST OPTOELECTRONICS, 2010)
Current-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (Phi(bo)) and ideality factor (n) determined from the ...