Operation and design of van der waals tunnel transistors: a 3-d quantum transport study

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dc.authoridBiel, Blanca -- 0000-0003-0574-1214; Cresti, Alessandro -- 0000-0002-1326-2515; Pala, Marco -- 0000-0001-5733-515X; Cao, Jiang -- 0000-0002-7646-8318;
dc.contributor.authorCao, Jiang
dc.contributor.authorLogoteta, Demetrio
dc.contributor.authorÖzkaya, Sibel
dc.contributor.authorBiel, Blanca
dc.contributor.authorCresti, Alessandro
dc.contributor.authorPala, Marco
dc.contributor.authorEsseni, David
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:27:33Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:27:33Z
dc.date.issued2016
dc.departmentFen-Edebiyat Fakültesi
dc.description.abstractWe propose a model Hamiltonian for van der Waals tunnel transistors (vdW-TFETs) relying on few physical parameters calibrated against density functional theory (DFT) band structure calculations. Based on this model, we develop a fully 3-D nonequilibrium Green's function simulator including electron-phonon scattering, and we investigate some fundamental aspects and design challenges related to vdW-TFETs based on single-layer MoS2 and WTe2. In particular, we devote a specific analysis to the impact of top gate alignment and back-oxide thickness on the device performance. Our results suggest that the vdW-TFETs can provide very small values of subthreshold swing (SS) and fairly good ON-state current. However, these devices also pose specific design challenges related to the geometrical features of gated regions, and their ultimate SS may be lower limited by inelastic phonon scattering.
dc.description.sponsorshipFrench ANR [ANR-13-NANO-0009-01 NOODLES]; European Community's Seventh Framework Programme [619509]; Ramon y Cajal Program (MINECO)
dc.description.sponsorshipThis work was supported in part by the French ANR under Project ANR-13-NANO-0009-01 NOODLES, in part by the European Community's Seventh Framework Programme under Grant 619509 (Project E2SWITCH), in part by the Ramon y Cajal Program (MINECO), and in part by the RES-BSC and the CSIRC-UGR Supercomputing Centers for providing Computer Facilities. The review of this paper was arranged by Editor J. Knoch.
dc.identifier.doi10.1109/TED.2016.2605144
dc.identifier.endpage4394en_US
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.issue11en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage4388en_US
dc.identifier.urihttps://doi.org/10.1109/TED.2016.2605144
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5886
dc.identifier.volume63en_US
dc.identifier.wosWOS:000389340400036
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIEEE
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectNonequilibrium Green's Function (NEGF)
dc.subjectSteep Slope
dc.subjectTransition Metal Dichalcogenides
dc.subjectTunnel FET (TFET)
dc.titleOperation and design of van der waals tunnel transistors: a 3-d quantum transport study
dc.typeArticle

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