Electron-transport properties of a ZnMgO/ZnO hetero structure and the effect of ınterface roughness and ZnMgO thickness

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dc.authoridYarar, Zeki -- 0000-0002-5555-0363; ozdemir, meryem -- 0000-0002-7495-8014;
dc.contributor.authorÖzdemir, B.
dc.contributor.authorYarar, Z.
dc.contributor.authorÖzdemir, M. D.
dc.contributor.authorAtasever, O. S.
dc.contributor.authorÖzdemir, M.
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-29T19:28:03Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-29T19:28:03Z
dc.date.issued2015
dc.department[Ozdemir, B. -- Atasever, O. S. -- Ozdemir, M.] Cukurova Univ, Dept Phys, TR-01330 Adana, Turkey -- [Yarar, Z.] Mersin Univ, Fac Arts & Sci, Dept Phys, TR-33343 Ciftlikkoy, Mersin, Turkey -- [Ozdemir, M. D.] Aksaray Univ, Fac Arts & Sci, Dept Phys, TR-68100 Aksaray, Turkey
dc.description.abstractThe electron-transport properties of a ZnMgO/ZnO hetero structure were studied by use of an ensemble Monte Carlo technique. There was no intentional doping in the profile and the entire charge is because of polarization of charges at the interface. Interface roughness, and the intensity of acoustic and optic phonon scattering were used in the ensemble Monte Carlo method to find the transport properties of the two-dimensional electron gas (2DEG). The low-field mobility characteristics of the structure were determined as a function of temperature, the thickness of the ZnMgO layer, and the interface roughness. The interface roughness was found to have a very large effect on the drift mobility of carriers, especially at low temperatures. It was observed that as the thickness of the ZnMgO increases the concentration of electrons increases whereas the mobility of the electrons decreases. The low-field mobility values obtained from ensemble Monte Carlo simulations were in agreement with published experimental data.
dc.identifier.doi10.1007/s11664-015-3776-7
dc.identifier.endpage3737en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue10en_US
dc.identifier.scopusqualityQ2
dc.identifier.startpage3733en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-015-3776-7
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5976
dc.identifier.volume44en_US
dc.identifier.wosWOS:000360672900070
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Electronic Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectZnMgO/ZnO
dc.subjectPolarization
dc.subjectMobility
dc.subjectMonte Carlo
dc.titleElectron-transport properties of a ZnMgO/ZnO hetero structure and the effect of ınterface roughness and ZnMgO thickness
dc.typeArticle

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