Screening effects on the mobility properties in AlGaN/GaN heterostructures with varied Al content
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Tarih
2022
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
World Scientific
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The electron mobility at a AlGaN/GaN heterostructure is calculated using an ensemble Monte Carlo (MC) technique where the emphasis is primarily given to screening effects and dislocation scattering. Calculations of electron steady-state velocity-field curves confirm that screening has significant effects on the transport properties of AlGaN/GaN heterostructures. The mobility calculations are obtained for Al-content (8-35%), thickness of AlGaN barrier (30-500Å) and for various temperatures (77-1000K). Based on our theoretical scattering rates calculations, we show that screening effects should be included for all scattering rates to obtain good agreement with experimental results. Besides, especially dislocation scattering should be taken into account to get mobility results that agree with experiments at low field values. Our overall results agree reasonably well with experimental studies. These results can be highly useful in design and optimization of GaN-based devices.
Açıklama
Anahtar Kelimeler
AlGaN/GaN Heterostructure, Monte Carlo Simulation (MC), Scattering Rates, Transport
Kaynak
International Journal of Modern Physics C
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
-
Sayı
-
