Ab-initio calculations on half-Heusler NiXSn (X = Zr, Hf) compounds: electronic and optical properties under pressure
dc.authorid | OZISIK, HACI -- 0000-0002-4011-1720; | |
dc.contributor.author | Özışık, Havva Boğaz | |
dc.contributor.author | Ateşer, Engin | |
dc.contributor.author | Özışık, Hacı | |
dc.contributor.author | Çolakoğlu, Kemal | |
dc.contributor.author | Deligöz, Engin | |
dc.date.accessioned | 13.07.201910:50:10 | |
dc.date.accessioned | 2019-07-16T08:36:14Z | |
dc.date.available | 13.07.201910:50:10 | |
dc.date.available | 2019-07-16T08:36:14Z | |
dc.date.issued | 2017 | |
dc.department | [Ozisik, H. B. -- Ateser, E. -- Deligoz, E.] Aksaray Univ, Dept Phys, TR-68100 Aksaray, Turkey -- [Ozisik, H.] Aksaray Univ, Dept BOTE, TR-68100 Aksaray, Turkey -- [Colakoglu, K.] Gazi Univ, Dept Phys, TR-06500 Ankara, Turkey | |
dc.description.abstract | In this study, we have investigated the electronic and optical properties of half-Heusler NiXSn (X = Zr, Hf) compounds under pressure by means of first principles calculations. The generalized gradient approximation is used to model exchange-correlation effects. We have estimated a transition from indirect band gap to direct band gap at 50 and 127 GPa for NiZrSn and NiHfSn, respectively. We have also plotted the static dielectric constant versus pressure for both compounds. The obtained results are in agreement with the available experimental and theoretical data. | |
dc.identifier.doi | 10.1007/s12648-017-0971-9 | |
dc.identifier.endpage | 778 | en_US |
dc.identifier.issn | 0973-1458 | |
dc.identifier.issn | 0974-9845 | |
dc.identifier.issue | 7 | en_US |
dc.identifier.scopusquality | Q2 | |
dc.identifier.startpage | 773 | en_US |
dc.identifier.uri | https://doi.org/10.1007/s12648-017-0971-9 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12451/3213 | |
dc.identifier.volume | 91 | en_US |
dc.identifier.wos | WOS:000407392800007 | |
dc.identifier.wosquality | N/A | |
dc.indekslendigikaynak | Web of Science | |
dc.indekslendigikaynak | Scopus | |
dc.language.iso | en | |
dc.publisher | Indian Assoc Cultivation Science | |
dc.relation.ispartof | Indian Journal of Physics | |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
dc.rights | info:eu-repo/semantics/closedAccess | |
dc.subject | Half-Heusler compounds | |
dc.subject | Optical properties | |
dc.subject | Electronic properties | |
dc.subject | NiZrSn | |
dc.subject | NiHfSn | |
dc.title | Ab-initio calculations on half-Heusler NiXSn (X = Zr, Hf) compounds: electronic and optical properties under pressure | |
dc.type | Article |
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