Atomic and electronic structures of the group-IV elements on Si(111)-(root 3x root 3) surface

Basit Öğe Kaydı
dc.contributor.authorÖzkaya, Sibel
dc.contributor.authorÇakmak, Mükerrem
dc.contributor.authorAlkan, Berk
dc.contributor.editorJohansson, LSO
dc.contributor.editorAndersen, JN
dc.contributor.editorGothelid, M
dc.contributor.editorHelmersson, U
dc.contributor.editorMontelius, L
dc.contributor.editorRubel, M
dc.contributor.editorSetina, J
dc.contributor.editorWernersson, LE
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-16T09:20:52Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-16T09:20:52Z
dc.date.issued2008
dc.departmentSabire Yazıcı Fen Edebiyat Fakültesi
dc.description17th International Vacuum Congress/13th International Conference on Surface Science/International Conference on Nanoscience and Technology -- JUL 02-06, 2007 -- Stockholm, SWEDEN
dc.descriptionWOS:000275655200255
dc.description.abstractWe have examined the Si(111) surface with 1/3 monolayer of group-IV elements within the abinitio density functional theory We have considered two possible threefold-c oordinated sites for the atom adsorption: (i) H-3 site (this site is directly above a fourth-layer Si atom and (ii) T-4 site (directly above a second-layer Si atom). For the atoms Ge, Sn, and Pb, the T-4 position always gives the most stable configuration, comparing with the H-3 site. The calculated energy difference between T-4 and H-3 for Pb, Ge, and Sn, is 0.32 eV, 0.59 eV, and 0.41eV, respectively. We have also presented electronic band structure and orbital character of the surface states of the Sn/Si(111)-(root 3x root 3)surface.
dc.description.sponsorshipSwedish Vacuum Soc
dc.description.sponsorshipTurkish State Planning Organization [2001K120590]; Gazi University; BAP [05/2006-19, 05/2007-41]
dc.description.sponsorshipThis work was supported by Turkish State Planning Organization (Project Number: 2001K120590). M. C gratefully acknowledges Gazi University for the financial support under BAP project 05/2006-19 and 05/2007-41.
dc.identifier.doi10.1088/1742-6596/100/7/072025
dc.identifier.issn1742-6588
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1088/1742-6596/100/7/072025
dc.identifier.urihttps://hdl.handle.net/20.500.12451/5131
dc.identifier.volume100en_US
dc.identifier.wosWOS:000275655200255
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPublishing Ltd
dc.relation.ispartofProceedings Of The 17th International Vacuum Congress/13th International Conference on Surface Science/İnternational Conference on Nanoscience and Technology
dc.relation.ispartofseriesJournal of Physics Conference Series
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.titleAtomic and electronic structures of the group-IV elements on Si(111)-(root 3x root 3) surface
dc.typeConference Object

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim
İsim:
ozkaya-sibel-2008.pdf
Boyut:
785.98 KB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir

Koleksiyon

Bildiri ve Sunum Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu