Illumination effect on admittance measurements of polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes in wide frequency and applied bias voltage range

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dc.contributor.authorYerişkin, Seçkin Altındal
dc.contributor.authorUslu, Habibe
dc.contributor.authorTunç, Tuncay
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-16T08:23:33Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-16T08:23:33Z
dc.date.issued2011
dc.departmentEğitim Fakültesi
dc.descriptionIstanbul Kultur University;Gebze Institute of Technology;Doga Nanobiotech Inc.;Terra Lab. Inc;LOT Oriel Group Europe
dc.description1st International Congress on Advances in Applied Physics and Materials Science, APMAS2011 -- 12 May 2011 through 15 May 2011 -- Antalya --
dc.description.abstractIn order to have a good interpretation of the illumination effect on the capacitance-voltage (C-V) and conductance-voltage (G/?-V) profiles, C-V and G/?-V characteristics of the polyvinyl alcohol (Co, Zn-Doped)/n-Si Schottky barrier diodes (SBDs) were investigated in the wide frequency and applied bias voltage ranges at room temperature. Experimental results show that the values of both C and G/? are strong functions of frequency and applied bias voltage in dark and under illumination (200 W) conditions. It is clear that the dispersion in C and G/? is considerably high in the depletion and accumulation regions due to illumination induced electron-hole pairs and series resistance (R s) effect, respectively. The values of C and G/? exponentially decrease with the increasing frequency and at high frequencies (f>100kHz) the values of C and G/? become almost independent of frequency both in dark under illumination. © 2011 American Institute of Physics.
dc.identifier.doi10.1063/1.3663178
dc.identifier.endpage545en_US
dc.identifier.isbn9780735409712
dc.identifier.issn0094-243X
dc.identifier.scopusqualityQ4
dc.identifier.startpage541en_US
dc.identifier.urihttps://dx.doi.org/10.1063/1.3663178
dc.identifier.urihttps://hdl.handle.net/20.500.12451/2785
dc.identifier.volume1400en_US
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofAIP Conference Proceedings
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectElectrical Characteristics
dc.subjectFrequency and Voltage Dependent
dc.subjectIllumination Effect
dc.subjectPVA
dc.subjectSeries Resistance
dc.titleIllumination effect on admittance measurements of polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes in wide frequency and applied bias voltage range
dc.typeConference Object

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