Wi-Fi frekansında RF enerji hasadı için parametre analizi
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Tarih
2024
Yazarlar
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Cilt Başlığı
Yayıncı
Aksaray Üniversitesi Fen Bilimleri Enstitüsü
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Bu çalışmada, üretici firmalar tarafından üretilmiş olan toplu elemanların (Lumped Components) kullanımı göz önünde bulundurularak 2.45 GHz ve 5,8 GHz frekanslarında 1. kademeden 6. kademeye kadar RF Enerji Hasadı devreleri incelenmiştir. Bütün analizler simülasyon yoluyla yapılıp simülasyonlar, Advanced Design System (ADS) 2016 programı kullanılarak yapılmıştır. Sistem 50 ? iç dirence sahip bir antenden, 2.450 GHz ve 5,8 GHz (Wi-Fi) frekansında çalışacak şekilde düşünülmüştür. Doğrultma devresi için HSMS2850, HSMS2852, HSMS285B, HSMS285C, HSMS2860, HSMS2862, HSMS286B, HSMS2820, HSMS2822, HSMS2810 ve SMS7630 Schottky diyotlarının kullanımı göz önünde bulundurulmuştur. Her bir diyot için bu frekansta sistemin veriminin en yüksek olduğu yük direnci -30 dBm ile 0 dBm aralığındaki giriş gücü için incelenmiştir. Verimi yükseltmek amacıyla L tipi (L-C) empedans uyumlama devresi tasarımı yapılmış, elde edilen değerlere yakın değerleri veren Murata firmasının ürünlerinin parametreleri kullanılmıştır. Son olarak, üretici firma ürünlerinin kullanılmasıyla ideal değerlerden uzaklaşan verimi ideale yaklaştırabilmek için açık – seri iletim hattı (Transmission Line (TL)) kullanılarak, elde edilen sistemin çıkış gerilimi ve verimi analiz edilmiştir. İncelenen diyotlar arasında 2,45 GHz frekansında en yüksek verim SMS7630 diyotu için 2,7 k? yük direncinde -1 dBm giriş gücünde % 46 olarak, en yüksek çıkış gerilimi ise HSMS286B diyotu için 3. kademede 36,6 k? yük direncinde 0 dBm giriş gücünde 3 V olarak elde edilmiştir. 5,8 GHz frekansında en yüksek verim SMS 7630 diyotu için 2 k? yük direncinde 0 dBm giriş gücünde % 35 olarak, en yüksek çıkış gerilimi ise SMS7630 diyotu için 6. kademede 15,3 k? yük direncinde 0 dBm giriş gücünde 1,67 V olarak elde edilmiştir.
In this study, circuit of 2.45 GHz and 5,8 GHz RF energy harvesting from 1st stage to 6th stage which is considered that use of lumped components that produced by manufacturing companies, has been studied. All analyzes have been made through simulation using the Advanced Design System (ADS) 2016 program. The system was designed to operate at a frequency of 2.450 GHz and 5,8 GHz (Wi-Fi) with a 50 ? internal resistance antenna. For the rectification circuit, the use of HSMS2850, HSMS2852, HSMS285B, HSMS285C, HSMS2860, HSMS2862, HSMS286B, HSMS2820, HSMS2822, HSMS2810, and SMS7630 Schottky diodes have been considered. The load resistance at which the system efficiency is highest at this frequency and the input power ranging from -30 dBm to 0 dBm were determined, for each diode. An L-type (L-C) impedance matching circuit design was developed to enhance the efficiency, and Murata products parameters that closely match the obtained values were used. Finally, the output voltage and efficiency of the resulting system were analyzed by using an open-serial transmission line (TL) in order to bring the efficiency, which is away from ideal values by using the manufacturer's products, closer to the ideal. Among the examined diodes, the highest efficiency was obtained for SMS7630 diode as 46% at a load resistance of 2.7 k? and -1 dBm input power. The highest output voltage was obtained for HSMS286B diode as 3 V at 3rd stage, a load resistance of 36.6 k? and 0 dBm input power with 2,45 GHz frequency. The highest efficiency was obtained for SMS7630 diode as 35% at a load resistance of 2 k? and 0 dBm input power. The highest output voltage was obtained for SMS7630 diode as 1,67 V at 6th stage, a load resistance of 15,3 k? and 0 dBm input power with 5,8 GHz frequency.
In this study, circuit of 2.45 GHz and 5,8 GHz RF energy harvesting from 1st stage to 6th stage which is considered that use of lumped components that produced by manufacturing companies, has been studied. All analyzes have been made through simulation using the Advanced Design System (ADS) 2016 program. The system was designed to operate at a frequency of 2.450 GHz and 5,8 GHz (Wi-Fi) with a 50 ? internal resistance antenna. For the rectification circuit, the use of HSMS2850, HSMS2852, HSMS285B, HSMS285C, HSMS2860, HSMS2862, HSMS286B, HSMS2820, HSMS2822, HSMS2810, and SMS7630 Schottky diodes have been considered. The load resistance at which the system efficiency is highest at this frequency and the input power ranging from -30 dBm to 0 dBm were determined, for each diode. An L-type (L-C) impedance matching circuit design was developed to enhance the efficiency, and Murata products parameters that closely match the obtained values were used. Finally, the output voltage and efficiency of the resulting system were analyzed by using an open-serial transmission line (TL) in order to bring the efficiency, which is away from ideal values by using the manufacturer's products, closer to the ideal. Among the examined diodes, the highest efficiency was obtained for SMS7630 diode as 46% at a load resistance of 2.7 k? and -1 dBm input power. The highest output voltage was obtained for HSMS286B diode as 3 V at 3rd stage, a load resistance of 36.6 k? and 0 dBm input power with 2,45 GHz frequency. The highest efficiency was obtained for SMS7630 diode as 35% at a load resistance of 2 k? and 0 dBm input power. The highest output voltage was obtained for SMS7630 diode as 1,67 V at 6th stage, a load resistance of 15,3 k? and 0 dBm input power with 5,8 GHz frequency.
Açıklama
Anahtar Kelimeler
Enerji Hasadı, Gerilim Çoklayıcı, Empedans Uyumlama, Schottky Diyot, Düşük Güç Uygulamaları, Energy Harvesting, Voltage Multiplier, Impedance Matching, Schottky Diode, Low Power Applications
