Yazar "Cao, Jiang" seçeneğine göre listele

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    A computational study of van der Waals tunnel transistors: Fundamental aspects and design challenges
    (Institute of Electrical and Electronics Engineers Inc., 2015) Cao, Jiang; Logoteta, Demetrio; Özkaya, Özkaya; Biel, Blanca; Cresti, Alessandro; Pala, Marco; Esseni, David
    We propose a model Hamiltonian for van der Waals tunnel transistors relying on a few physical parameters that we calibrate against DFT band structure calculations. This approach allowed us to develop a fully three-dimensional (3-D) NEGF based simulator and to investigate fundamental and design aspects related to van der Waals tunnel transistors, such as: (a) area and edge tunneling components, and scaling with device area; (b) impact of top gate alignment and back-oxide thickness on the device performance; (c) influence of inelastic phonon scattering on the device operation and sub-threshold swing; (d) benchmarking of switching energy and delay. © 2015 IEEE.
  • Küçük Resim
    Öğe
    Operation and design of van der waals tunnel transistors: a 3-d quantum transport study
    (IEEE, 2016) Cao, Jiang; Logoteta, Demetrio; Özkaya, Sibel; Biel, Blanca; Cresti, Alessandro; Pala, Marco; Esseni, David
    We propose a model Hamiltonian for van der Waals tunnel transistors (vdW-TFETs) relying on few physical parameters calibrated against density functional theory (DFT) band structure calculations. Based on this model, we develop a fully 3-D nonequilibrium Green's function simulator including electron-phonon scattering, and we investigate some fundamental aspects and design challenges related to vdW-TFETs based on single-layer MoS2 and WTe2. In particular, we devote a specific analysis to the impact of top gate alignment and back-oxide thickness on the device performance. Our results suggest that the vdW-TFETs can provide very small values of subthreshold swing (SS) and fairly good ON-state current. However, these devices also pose specific design challenges related to the geometrical features of gated regions, and their ultimate SS may be lower limited by inelastic phonon scattering.