Search
Now showing items 1-10 of 13
Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer
(2010)
The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal ...
Illumination effect on admittance measurements of polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes in wide frequency and applied bias voltage range
(2011)
In order to have a good interpretation of the illumination effect on the capacitance-voltage (C-V) and conductance-voltage (G/?-V) profiles, C-V and G/?-V characteristics of the polyvinyl alcohol (Co, Zn-Doped)/n-Si Schottky ...
Illumination dependent admittance characteristics of Au/Zinc acetate doped polyvinyl alcohol (PVA:Zn)/n-Si Schottky barrier diodes (SBDs)
(American Institute Physics, 2011)
This study presents the effect of illumination on main electrical parameters of Schottky barrier diode (SBD). The admittance (capacitance-voltage (C-V) and conductance-voltage (G/omega-V)) characteristics of Au/Zinc acetate ...
The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes
(Wiley-Blackwell, 2011)
The Au/polyvinyl alcohol (PVA) (Co, Zndoped)/ n-Si Schottky barrier diodes (SBDs) were exposed to various illumination intensities. Illumination effect on the dielectric properties has been investigated by using capacitance- ...
Temperature dependent currentvoltage (IV) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
(ELSEVIER SCI, 2011)
Current-voltage (I-V) characteristics of Au/PVA/n-Si (1 1 1) Schottky barrier diodes (SBDs) have been investigated in the temperature range 80-400 K. Here, polyvinyl alcohol (PVA) has been used as interfacial layer between ...
Frequency and temperature dependence of dielectric properties of au/polyvinyl alcohol (co, ni-doped)/n-si schottky diodes
(Taylor & Francis As, 2010)
The dielectric properties and AC conductivity of Au/polyvinyl alcohol (Co, Ni-doped)/n-Si Schottky diodes (SDs) were investigated in the frequency range 1kHz-1MHz and in the temperature range 80-400K. The frequency and ...
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
(Pergamon-Elsevier Science, 2010)
The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs) were studied ill the temperature range of 80-400 K. The investigation of various SDs fabricated with different types of interfacial ...
Investigation of current-voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide
(Wiley-Blackwell, 2014)
Temperature dependent current-voltage (I-V) measurements of Au/Polyvinyl Alcohol+Bi2O3/n-Si structure were conducted between 100 and 350 K for investigating the temperature dependence of I-V characteristics and current ...
Preparation and dielectric properties of polyvinyl alcohol (Co, Zn Acetate) Fiber/n-Si and polyvinyl alcohol (Ni, Zn Acetate)/n-Si Schottky diodes
(Korean Fiber SOC, 2011)
Dielectric properties and ac electrical conductivity (sigma(ac)) of Au/PVA(Co, Zn acetate)/n-Si and Au/PVA(Ni, Zn acetate)/n-Si Schottky diodes (SDs) have been investigated in dark and under illumination by using experimental ...
Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer
(NATL INST OPTOELECTRONICS, 2010)
Current-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (Phi(bo)) and ideality factor (n) determined from the ...