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Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer
(2010)
The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal ...
Anomalous peak in the forward-bias C-V plot and temperature-dependent behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) structures
(Springer, 2011)
In this study, the temperature-dependent mean density of interface states (N(SS)) and series resistance (R(S)) profiles of Au/PVA (Ni,Zn-doped)/n-Si(111) structures are determined using current-voltage (I-V) and admittance ...
The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices
(Elsevier Science Sa, 2011)
Metal/polyvinyl alcohol/n-type silicon Schottky barrier (SB) devices have been fabricated in this study. The importance of this study is that PVA (Co, Zn doped) nanofiber film as an interfacial layer was formed by the ...
Frequency and temperature dependence of dielectric properties of au/polyvinyl alcohol (co, ni-doped)/n-si schottky diodes
(Taylor & Francis As, 2010)
The dielectric properties and AC conductivity of Au/polyvinyl alcohol (Co, Ni-doped)/n-Si Schottky diodes (SDs) were investigated in the frequency range 1kHz-1MHz and in the temperature range 80-400K. The frequency and ...
Temperature dependent currentvoltage (IV) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
(ELSEVIER SCI, 2011)
Current-voltage (I-V) characteristics of Au/PVA/n-Si (1 1 1) Schottky barrier diodes (SBDs) have been investigated in the temperature range 80-400 K. Here, polyvinyl alcohol (PVA) has been used as interfacial layer between ...
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
(Pergamon-Elsevier Science, 2010)
The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs) were studied ill the temperature range of 80-400 K. The investigation of various SDs fabricated with different types of interfacial ...
Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer
(NATL INST OPTOELECTRONICS, 2010)
Current-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (Phi(bo)) and ideality factor (n) determined from the ...
Negative dielectric constant and electrical conductivity of Au/n-Si (111) schottky barrier diodes with PVA/Ni,Zn interfacial layer
(Wiley-Blackwell, 2011)
In this study, the dielectric properties and alternating-current (ac) conductivity of Au/(PVA/Ni,Zn acetates)/n-Si Schottky diodes (SDs) were determined by the measurement impedance technique. Dielectric properties and ...
