Browsing by Author "Dökme, İlbilge"
Now showing items 1-11 of 11
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Anomalous peak in the forward-bias C-V plot and temperature-dependent behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) structures
Tunç, Tuncay; Altındal, Şemsettin; Dökme, İlbilge; Uslu, Habibe (Springer, 2011)In this study, the temperature-dependent mean density of interface states (N(SS)) and series resistance (R(S)) profiles of Au/PVA (Ni,Zn-doped)/n-Si(111) structures are determined using current-voltage (I-V) and admittance ... -
The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices
Dökme, İlbilge; Tunç, Tuncay; Uslu, İbrahim; Altındal, Şemsettin (Elsevier Science Sa, 2011)Metal/polyvinyl alcohol/n-type silicon Schottky barrier (SB) devices have been fabricated in this study. The importance of this study is that PVA (Co, Zn doped) nanofiber film as an interfacial layer was formed by the ... -
Frequency and temperature dependence of dielectric properties of au/polyvinyl alcohol (co, ni-doped)/n-si schottky diodes
Tunç, Tuncay; Uslu, İbrahim; Dökme, İlbilge; Altındal, Şemsettin; Uslu, Habibe (Taylor & Francis As, 2010)The dielectric properties and AC conductivity of Au/polyvinyl alcohol (Co, Ni-doped)/n-Si Schottky diodes (SDs) were investigated in the frequency range 1kHz-1MHz and in the temperature range 80-400K. The frequency and ... -
Negative dielectric constant and electrical conductivity of Au/n-Si (111) schottky barrier diodes with PVA/Ni,Zn interfacial layer
Tunç, Tuncay; Dökme, İlbilge; Altındal, Şemsettin; Uslu, İbrahim (Wiley-Blackwell, 2011)In this study, the dielectric properties and alternating-current (ac) conductivity of Au/(PVA/Ni,Zn acetates)/n-Si Schottky diodes (SDs) were determined by the measurement impedance technique. Dielectric properties and ... -
Sınıf öğretmeni adaylarının bazı fizik konularındaki kavram yanılgıları ve araştırmada uygulanan tekniğin araştırma sonucuna etkisi
Bu çalışma sınıf öğretmeni adaylarının bazı temel fizik kavramları hakkında sahip oldukları kavram yanılgılarını tespit etmeyi amaçlamanın yanında kavram yanılgısı araştırmalarında uygulanan tekniğin araştırma sonucuna ... -
Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes
Bülbül, Mehmet Mahir; Bengi, Seda; Dökme, İlbilge; Altndal, Şemsettin; Tunç, Tuncay (American Institute Physics, 2010)The temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of Au/polyvinyl alcohol (Co,Zn-doped)/n-Si Schottky diodes (SDs) was investigated by considering series resistance ... -
Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer
Tunç, Tuncay; Dökme, İlbilge; Altındal, Şemsettin; Uslu, İbrahim (NATL INST OPTOELECTRONICS, 2010)Current-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (Phi(bo)) and ideality factor (n) determined from the ... -
Temperature dependent currentvoltage (IV) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
Tunç, Tuncay; Altındal, Şemsettin; Uslu, İbrahim; Dökme, İlbilge; Uslu, Habibe (ELSEVIER SCI, 2011)Current-voltage (I-V) characteristics of Au/PVA/n-Si (1 1 1) Schottky barrier diodes (SBDs) have been investigated in the temperature range 80-400 K. Here, polyvinyl alcohol (PVA) has been used as interfacial layer between ... -
Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer
The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal ... -
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
Dökme, İlbilge; Altındal, Şemsettin; Tunç, Tuncay; Uslu, İbrahim (Pergamon-Elsevier Science, 2010)The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs) were studied ill the temperature range of 80-400 K. The investigation of various SDs fabricated with different types of interfacial ... -
Üç aşamalı sorularla sınıf öğretmeni adaylarının bazı temel fen kavramları hakkında sahip oldukları kavram yanılgıları
Tunç, Tuncay; Akçam, Hatice Kübra; Dökme, İlbilge (Gazi Üniversitesi, 2011)Bu araştırma, üç aşamalı çoktan seçmeli sorularla sınıf öğretmenliği bölümünde okuyan öğrencilerin bazı temel fen kavramları hakkında sahip oldukları kavram yanılgılarını tespit etmek amacı ile yapılmıştır. Bu amaç ...
