Range determination of the influence of carrier concentration on lattice thermal conductivity for bulk Si and nanowires
Yükleniyor...
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Aksaray Üniversitesi
Erişim Hakkı
Attribution-NonCommercial-NoDerivs 3.0 United States
info:eu-repo/semantics/openAccess
info:eu-repo/semantics/openAccess
Özet
Mathematical modeling has been extended to simulate some physical systems to calculate some parameters that may need a sophisticated cost or may have some obstacles to be measured directly with an experimental method. In this study, the Modified Callaway Model has been used to calculate size dependence lattice thermal conductivity (LTC), and the influence of carrier concentration for bulk Si and its nanowires (NWs) with diameters of 22, 37, 56, and 115 nm has been investigated. Calculations were performed from 3K to 1600K for all cases. The effects of carrier concentration on LTC has found to begin from (1016 cm-1 ) for the bulk state and that increased to (1024 cm-1 ) for the NW with a diameter of 22 nm. The temperature that the maximum effect of carrier concentration can occur, has found to be at (10 K) for the bulk, and that increased to (340 K) for the (22 nm) Si NW.
Açıklama
Anahtar Kelimeler
Lattice Thermal Conductivity, Si; Nanowires, Carrier Concentration, Mass Density
Kaynak
Aksaray University Journal of Science and Engineering
WoS Q Değeri
Scopus Q Değeri
Cilt
4
Sayı
1
