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dc.contributor.authorDökme, İlbilge
dc.contributor.authorTunç, Tuncay
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorUslu, İbrahim
dc.date.accessioned13.07.201910:50:10
dc.date.accessioned2019-07-16T08:23:56Z
dc.date.available13.07.201910:50:10
dc.date.available2019-07-16T08:23:56Z
dc.date.issued2010
dc.identifier.issn18426573
dc.identifier.urihttps://hdl.handle.net/20.500.12451/2844
dc.description.abstractThe dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The dielectric constant (ε″), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σac) obtained from the measured capacitance and conductance are studied for Au/PVA(Co,Ni-Doped)/n-Si SDs. Experimental results show that the values of ε″, ε″ and tanδ were found a function of temperature. The ac electrical conductivity (σac) of Au/ PVA(Co,Ni-Doped)/n-Si SDs is found to increase with temperature.
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAu/PVA(Co,Ni-Doped)/n-Sien_US
dc.subjectDielectric Propertiesen_US
dc.subjectElectrospining Techniqueen_US
dc.subjectPolyvinyl Acoholen_US
dc.titleTemperature dependent dielectric properties of Schottky diodes with organic interfacial layeren_US
dc.typearticleen_US
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communicationsen_US
dc.contributor.departmentEğitim Fakültesien_US
dc.identifier.volume4en_US
dc.identifier.issue8en_US
dc.identifier.startpage1225en_US
dc.identifier.endpage1228en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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