Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer

Abstract

The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The dielectric constant (ε″), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σac) obtained from the measured capacitance and conductance are studied for Au/PVA(Co,Ni-Doped)/n-Si SDs. Experimental results show that the values of ε″, ε″ and tanδ were found a function of temperature. The ac electrical conductivity (σac) of Au/ PVA(Co,Ni-Doped)/n-Si SDs is found to increase with temperature.