Browsing by Author "Uslu, İbrahim"
Now showing items 1-17 of 17
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The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices
Dökme, İlbilge; Tunç, Tuncay; Uslu, İbrahim; Altındal, Şemsettin (Elsevier Science Sa, 2011)Metal/polyvinyl alcohol/n-type silicon Schottky barrier (SB) devices have been fabricated in this study. The importance of this study is that PVA (Co, Zn doped) nanofiber film as an interfacial layer was formed by the ... -
Frequency and temperature dependence of dielectric properties of au/polyvinyl alcohol (co, ni-doped)/n-si schottky diodes
Tunç, Tuncay; Uslu, İbrahim; Dökme, İlbilge; Altındal, Şemsettin; Uslu, Habibe (Taylor & Francis As, 2010)The dielectric properties and AC conductivity of Au/polyvinyl alcohol (Co, Ni-doped)/n-Si Schottky diodes (SDs) were investigated in the frequency range 1kHz-1MHz and in the temperature range 80-400K. The frequency and ... -
The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes
Uslu, Habibe; Altındal, Şemsettin; Tunç, Tuncay; Uslu, İbrahim; Mammadov, Tofig S. (Wiley-Blackwell, 2011)The Au/polyvinyl alcohol (PVA) (Co, Zndoped)/ n-Si Schottky barrier diodes (SBDs) were exposed to various illumination intensities. Illumination effect on the dielectric properties has been investigated by using capacitance- ... -
Investigation of current-voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide
Yıldırım, Mert; Gökçen, Muharrem; Tunç, Tuncay; Uslu, İbrahim; Altındal, Şemsettin (Wiley-Blackwell, 2014)Temperature dependent current-voltage (I-V) measurements of Au/Polyvinyl Alcohol+Bi2O3/n-Si structure were conducted between 100 and 350 K for investigating the temperature dependence of I-V characteristics and current ... -
Negative dielectric constant and electrical conductivity of Au/n-Si (111) schottky barrier diodes with PVA/Ni,Zn interfacial layer
Tunç, Tuncay; Dökme, İlbilge; Altındal, Şemsettin; Uslu, İbrahim (Wiley-Blackwell, 2011)In this study, the dielectric properties and alternating-current (ac) conductivity of Au/(PVA/Ni,Zn acetates)/n-Si Schottky diodes (SDs) were determined by the measurement impedance technique. Dielectric properties and ... -
Preparation and characterization of neodymia doped PVA/Zr-Ce oxide nanocrystalline composites via electrospinning technique
Keskin, Selda; Uslu, İbrahim; Tunç, Tuncay; Öztürk, Mustafa; Aytimur, Arda (Taylor & Francis, 2011)In this study, neodymia doped poly(vinyl) alcohol/zirconium-cerium acetate (PVA/Zr-Ce) nanofibers were prepared using the electrospinning technique, and then calcined at 800 degrees C for 2 hours. For this purpose, PVA/Zr-Ce ... -
Preparation of gadolina stabilized bismuth oxide doped with boron via electrospinning technique
Tunç, Tuncay; Uslu, İbrahim; Durmuşoğlu, Şenol; Keskin, Selda; Aytimur, Arda; Akdemir, Ahmet (Springer, 2012)In this study, boron doped and undoped poly (vinyl) alcohol/bismuth-gadolina acetate (PVA/Bi-Gd) nanofibers were prepared using electrospinning technique then calcinated at 800 degrees C for 2 h. The originality of this ... -
PVA/PAA-based antibacterial wound dressing material with aloe vera
Serinçay, Halime; Özkan, Semiha; Yılmaz, Nurdane; Kocyiğit, Serhat; Uslu, İbrahim; Gürcan, Safa; Arısoy, Mustafa (Taylor & Francis Inc, 2013)The incorporation of drugs into the dressings make these dressings antimicrobial and help in control of infection around the wound. The wound dressing materials based on PVA/PAA, ciprofloxacin HCl, and aloe vera have been ... -
Studies on frequency and gate voltage effects on the dielectric properties of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer
Tunç, Tuncay; Gökçen, Muharrem; Uslu, İbrahim (SPRINGER HEIDELBERG, 2012)The admittance technique was used in order to investigate the frequency dependence of dielectric constant (epsilon'), dielectric loss (epsilon aEuro(3)), dielectric loss tangent (tan delta), the ac electrical conductivity ... -
Synthesis and characterization of boron doped alumina stabilized zirconia fibers
Uslu, İbrahim; Tunc, Tuncay; Keskin, Selda B.; Öztürk, Mustafa Kemal (Korean Fiber SOC, 2011)Boron doped PVA/Zr-Al acetate nanofibers were prepared by electrospinning using PVA as a precursor. The effect of calcination temperature on morphology and crystal structure was investigated at 250, 500, and 800 degrees ... -
Synthesis and characterization of boron-doped Bi2O3-La2O3 fiber derived nanocomposite precursor
Durmusoğlu, Şenol; Uslu, İbrahim; Tunç, Tuncay; Keskin, Selda; Aytimur, Arda; Akdemir, Ahmet (Springer, 2011)Boron doped poly(vinyl) alcohol/ bismuth - lanthanum acetate (PVA/Bi-La) nanofibers were prepared by electrospinning using PVA as a precursor. The effect of boron doping was investigated in terms of solution properties, ... -
Synthesis and characterization of boron-doped hafnia electrospun nanofibers and nanocrystalline ceramics
Uslu, İbrahim; Tunç, Tuncay; Öztürk, Mustafa Kemal; Aytimur, A. (Taylor & Francis, 2012)In this study, boron-doped poly(vinyl) alcohol/HfO2 nanofibers were prepared by electrospinning using PVA as a precursor. The effect of boron doping was investigated in terms of solution properties, morphological changes ... -
The synthesis of boron carbide ceramic via electrospinning technique
Uslu, İbrahim; Tunç, Tuncay (Springer, 2012)In this study, polyvinyl alcohol (PVA) and boric acid (BA) were mixed in an aqueous medium by heating in order to prepare a PVA/BA hybrid material. The viscosity and pH values of the PVA/BA hybrid material mixed in various ... -
Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (111) Schottky barrier diodes (SBDs) with polyvinyl alcohol (Co, Ni-Doped) interfacial layer
Tunç, Tuncay; Dökme, İlbilge; Altındal, Şemsettin; Uslu, İbrahim (NATL INST OPTOELECTRONICS, 2010)Current-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (Phi(bo)) and ideality factor (n) determined from the ... -
Temperature dependent currentvoltage (IV) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
Tunç, Tuncay; Altındal, Şemsettin; Uslu, İbrahim; Dökme, İlbilge; Uslu, Habibe (ELSEVIER SCI, 2011)Current-voltage (I-V) characteristics of Au/PVA/n-Si (1 1 1) Schottky barrier diodes (SBDs) have been investigated in the temperature range 80-400 K. Here, polyvinyl alcohol (PVA) has been used as interfacial layer between ... -
Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer
The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal ... -
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes
Dökme, İlbilge; Altındal, Şemsettin; Tunç, Tuncay; Uslu, İbrahim (Pergamon-Elsevier Science, 2010)The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs) were studied ill the temperature range of 80-400 K. The investigation of various SDs fabricated with different types of interfacial ...
