Cao, JiangLogoteta, DemetrioÖzkaya, SibelBiel, BlancaCresti, AlessandroPala, MarcoEsseni, David13.07.20192019-07-2913.07.20192019-07-2920160018-93831557-9646https://doi.org/10.1109/TED.2016.2605144https://hdl.handle.net/20.500.12451/5886We propose a model Hamiltonian for van der Waals tunnel transistors (vdW-TFETs) relying on few physical parameters calibrated against density functional theory (DFT) band structure calculations. Based on this model, we develop a fully 3-D nonequilibrium Green's function simulator including electron-phonon scattering, and we investigate some fundamental aspects and design challenges related to vdW-TFETs based on single-layer MoS2 and WTe2. In particular, we devote a specific analysis to the impact of top gate alignment and back-oxide thickness on the device performance. Our results suggest that the vdW-TFETs can provide very small values of subthreshold swing (SS) and fairly good ON-state current. However, these devices also pose specific design challenges related to the geometrical features of gated regions, and their ultimate SS may be lower limited by inelastic phonon scattering.eninfo:eu-repo/semantics/closedAccessNonequilibrium Green's Function (NEGF)Steep SlopeTransition Metal DichalcogenidesTunnel FET (TFET)Article63114388439410.1109/TED.2016.2605144Q2WOS:000389340400036N/A