Gökçen, M.Tunç, T.Altındal, S.Uslu, I.13.07.20192019-07-2913.07.20192019-07-2920121567-1739https://doi.org/10.1016/j.cap.2011.08.012https://hdl.handle.net/20.500.12451/5540Two types of Schottky Barrier Diodes (SBDs) with and without PVA (Bi2O3-doped) polymeric interfacial layer, were fabricated and measured at room temperature in order to investigate the effects of the PVA (Bi2O3-doped) interfacial layer on the main electrical parameters such as the ideality factor (n), zero-bias barrier height (Phi(B0)), series resistance (R-s) and interface-state density (N-ss). Electrical parameters of these two diodes were calculated from the current-voltage (I-V) characteristics and compared with each other. The values of Phi(B0), n and R-s for SBDs without polymeric interfacial layer are 0.71 eV, 1.44 and 4775 Omega, respectively. The values of Phi(B0), n and R-s for SBDs with PVA (Bi2O3-doped) polymeric interfacial layer are 0.74 eV, 3.49 and 10,030 Omega, respectively. For two SBDs, the energy density distribution profiles of interface states (N-ss) were obtained from forward-bias I-V measurements by taking the bias dependence of R-s of these devices into account. The values of N-ss obtained for the SBD with PVA (Bi2O3-doped) polymeric interfacial layer are smaller than those of the SBD without polymeric interfacial layer. (C) 2011 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/openAccessBi2O3-doped PVAMetal-polymer-semiconductor (MPS)Series Resistance EffectI-V CharacteristicsArticle12252553010.1016/j.cap.2011.08.012Q2WOS:000297003600031N/A