Taşçıoğlu, İlkeAydemir, UmutAltındal, ŞemsettinTunç, TuncayAslan, MHOral, AyÖzer, M.Çağlar, SH13.07.20192019-07-1613.07.20192019-07-162011978-0-7354-0971-20094-243Xhttps://doi.org/10.1063/1.3663133https://hdl.handle.net/20.500.12451/50851st International Congress on Advances in Applied Physics and Materials Science (APMAS) -- MAY 12-15, 2011 -- Antalya, TURKEYWOS:000301042000058This study presents the effect of illumination on main electrical parameters of Schottky barrier diode (SBD). The admittance (capacitance-voltage (C-V) and conductance-voltage (G/omega-V)) characteristics of Au/Zinc acetate doped polyvinyl alcohol (PVA:Zn)/n-Si SBD were investigated in dark and under various illumination intensities. Experimental results demonstrate that the C-V plots give a peak due to the illumination induced interface states or electron-hole pairs at metal/semiconductor (M/S) interface. The C-2-V plots were also drawn to determine main electrical parameters such as doping concentration (N-D), depletion layer width (W-D) and barrier height (Phi(B)(C-V)) of device. In addition, the voltage dependence R-s values were obtained from C-V and G/omega-V data by using Nicollian and Brews method. In order to obtain the real diode capacitance and conductance, the high frequency (1 MHz) C-m and G(m)/w values were corrected for the effect of series resistance. All these observations confirm that both C-V and G/w-V characteristics were strongly affected by illumination.eninfo:eu-repo/semantics/closedAccessAu/PVA:Zn/n-Si SBDsIllumination Effect on C-V and G/w-V CharacteristicsSeries ResistanceIntersection BehaviorConference Object140030731110.1063/1.3663133Q4WOS:000301042000058N/A