Altındal, S.Tunç, T.Tecimer, H.Yücedağ, İ.13.07.20192019-07-2913.07.20192019-07-2920141369-80011873-4081https://doi.org/10.1016/j.mssp.2014.05.007https://hdl.handle.net/20.500.12451/5697International Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEYWOS:000345645000009Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures were investigated in dark and under 250 W illumination level using forward and reverse bias current voltage (I-V) measurements at room temperature. Reverse saturation current (I-0), ideality factor (n), and zero-bias-barrier height (phi(B0)) values were found as 1.18 x 10(-8) A, 2.492 and 0.705 eV in dark (low region); 9.10 x 10(-7) A, 7.515 and 0.597 eV in dark (high region); and 1.05 x 10(-6) A, 6.053 and 0.593 eV under 250W illumination level. The forward bias semi-logarithmic I-V plot in dark was described using a two diode model, indicating two current-transport mechanisms acting in the diode. The first mechanism can be attributed to recombination of carriers between Au/(Ni, Zn) and doped PVA, and second one can be attributed to recombination in the depletion region. In addition, the energy density distribution profile of surface stares (N-ss) was extracted from the forward-bias I-V data by raking into account the voltage dependent of the effective barrier height(phi(e)), ideality factor n(V), and series resistance (R-s). (C) 2014 Elsevier Ltd. All rights reserved.eninfo:eu-repo/semantics/closedAccessAu/(Ni, Zn)-doped PVA/n-Si StructuresIllumination Effect on ElectricalCharacteristicsEnergy Dependent Profile of N-ssSeries and Shunt ResistancesArticle28485310.1016/j.mssp.2014.05.007Q1WOS:000345645000009N/A